TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 14 Pin |
Case/Package | SOIC-14 |
Power Rating | 1 W |
Rise/Fall Time | 40ns, 20ns |
Number of Outputs | 2 Output |
Output Voltage | 600 V |
Output Current | 1.9.2.3 A |
Number of Channels | 2 Channel |
Number of Positions | 14 Position |
Power Dissipation | 1 W |
Rise Time | 60 ns |
Fall Time | 35 ns |
Fall Time (Max) | 35 ns |
Fall Time (Max) | 60 ns |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 1000 mW |
Supply Voltage | 10V ~ 20V |
Supply Voltage (Max) | 20 V |
Supply Voltage (Min) | 10 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 8.74 mm |
Size-Width | 3.99 mm |
Size-Height | 1.5 mm |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IRS21814SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
● Floating channel designed for bootstrap operation
● Tolerant to negative transient voltage (dV/dt immune)
● Under-voltage lockout for both channels
● 3.3 and 5V Input logic compatible
● Matched propagation delay for both channels
● Logic and power ground ±5V offset
● Lower di/dt gate driver for better noise immunity
Infineon
23 Pages / 1.91 MByte
Infineon
48 Pages / 7.29 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
1 Pages / 0.18 MByte
Infineon
30 Pages / 0.41 MByte
International Rectifier
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, Separate High and Low Side Inputs, All High Voltage Pins On One Side, and SPLGY
Infineon
600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, 8 Lead PDIP, and 14 Lead MLPQ4x4.
Infineon
600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 14 Lead MLPQ 4x4, 8 Lead SOIC, and 8 Lead PDIP.
Infineon
600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, 8 Lead PDIP, and 14 Lead MLPQ4x4.
Infineon
600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 14 Lead MLPQ 4x4, 8 Lead SOIC, and 8 Lead PDIP.
International Rectifier
Driver 600V 2.3A 2Out Hi/Lo Side Non-Inv 14Pin SOIC N T/R
Infineon
600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in MLPQ 4X4 14L package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP.
International Rectifier
Driver 600V 2.3A 2Out Hi/Lo Side Non-Inv 14Pin SOIC N Tube
International Rectifier
Driver 600V 2.3A 2Out Hi/Lo Side Non-Inv 14Pin PDIP Tube
Infineon
MOSFET DRVR 600V 2.3A 2Out Hi/Lo Side Non-Inv 16Pin MLPQ EP Tube/Bulk
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