TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 110 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0071 Ω |
Polarity | N-Channel |
Power Dissipation | 110 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | 79A |
Rise Time | 35 ns |
Input Capacitance (Ciss) | 2290pF @50V(Vds) |
Input Power (Max) | 110 W |
Fall Time | 46 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 110W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 4.83 mm |
Size-Height | 9.02 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF1018EPBF is a 60V single N-channel HEXFET® Power MOSFET with high speed power switching and enhanced body diode dV/dt and dI/dt capability.
● High efficiency synchronous rectification in SMPS
● High frequency hard switching converter
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
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