TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 7 Pin |
Case/Package | TO-263-7 |
Power Rating | 375 W |
Number of Channels | 1 Channel |
Number of Positions | 7 Position |
Drain to Source Resistance (on) (Rds) | 1.5 mΩ |
Polarity | N-Channel |
Power Dissipation | 375 W |
Threshold Voltage | 4 V |
Input Capacitance | 8850 pF |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | 293A |
Rise Time | 61 ns |
Input Capacitance (Ciss) | 8850pF @50V(Vds) |
Fall Time | 69 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 375W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 6.22 mm |
Size-Height | 2.3 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
● Fully Characterized Capacitance and Avalanche SOA
● Enhanced body diode dV/dt and dI/dt Capability
Infineon
9 Pages / 0.3 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
International Rectifier
MOSFET MOSFT 60V 293A 2.1mOhm 200NC Qg
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