| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | TO-263-7 |
| Power Rating | 300 W |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.0038 Ω |
| Polarity | N-CH |
| Power Dissipation | 300 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 75 V |
| Continuous Drain Current (Ids) | 180A |
| Rise Time | 90 ns |
| Input Capacitance (Ciss) | 7580pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 44 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.55 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF2907ZS-7PPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low ON-resistance and world class current rating. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in server.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
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International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 3 Milliohms; ID 160A; D2Pak; PD 300W; VGS +/-20V
International Rectifier
MOSFET N-CH 75V 160A D2PAK7
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