| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 100 V |
| Current Rating | 17.0 A |
| Case/Package | D2PAK |
| Polarity | N-Channel |
| Power Dissipation | 3.80 W |
| Part Family | IRF530NS |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 17.0 A |
| Rise Time | 22.0 ns |
| Input Capacitance (Ciss) | 920pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
Description
●Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●• Advanced Process Technology
●• Ultra Low On-Resistance
●• Dynamic dv/dt Rating
●• 175°C Operating Temperature
●• Fast Switching
●• Fully Avalanche Rated
International Rectifier
11 Pages / 0.59 MByte
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