| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Power Rating | 1.3 W |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.112 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 1110 pF |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 3.4A |
| Rise Time | 550 ns |
| Input Capacitance (Ciss) | 1110pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF5803TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. It is ideal for applications where printed circuit board space is at a premium. It"s unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%. It is ideal for DC switches and load switch.
● Low gate charge
● Halogen-free
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