| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0039 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.8 V |
| Input Capacitance | 2315 pF |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 18A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 2315pF @15V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 7.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF8736TRPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for battery protection, high side and low side load switch, Notebook processor power and isolated DC-to-DC converters.
● Low gate charge
● 100% Rg tested
● Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
Infineon
9 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
8 Pages / 0.11 MByte
Infineon
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
Trans MOSFET N-CH 30V 18A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 18A 8Pin SOIC Tube
IFC
N-Channel 30V 4.8mΩ 17NC Surface Mount Hexfet Power Mosfet - SOIC-8
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
