TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 7 Pin |
Case/Package | Direct-FET |
Power Rating | 42 W |
Number of Channels | 1 Channel |
Number of Positions | 7 Position |
Drain to Source Resistance (on) (Rds) | 0.0044 Ω |
Polarity | N-Channel |
Power Dissipation | 42 W |
Threshold Voltage | 2.2 V |
Input Capacitance | 1360 pF |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20 V |
Continuous Drain Current (Ids) | 16A |
Rise Time | 40 ns |
Input Capacitance (Ciss) | 1360pF @10V(Vds) |
Input Power (Max) | 1.4 W |
Fall Time | 4.5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 40 ℃ |
Power Dissipation (Max) | 1.4W (Ta), 42W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 4.85 mm |
Size-Width | 3.95 mm |
Size-Height | 0.7 mm |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
Infineon
9 Pages / 0.23 MByte
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270 Pages / 11.59 MByte
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44 Pages / 3.69 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.19 MByte
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1 Pages / 0.13 MByte
International Rectifier
Trans MOSFET N-CH Si 20V 16A 7Pin Direct-FET ST
International Rectifier
Trans MOSFET N-CH 20V 16A 7Pin Direct-FET ST T/R
International Rectifier
Trans MOSFET N-CH Si 20V 16A 7Pin Direct-FET ST T/R
International Rectifier
Trans MOSFET N-CH Si 20V 16A 7Pin Direct-FET ST T/R
International Rectifier
Mosfet n-Ch 20V 16A Directfet - Irf6623tr1pbf
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