| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.02 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 16A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 3640pF @15V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 52 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
8 Pages / 0.2 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.14 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
Trans MOSFET N-CH 20V 16A 8Pin SOIC
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Power MOSFET(Vdss=20V, Rds(on)max=0.0065Ω, Id=16A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.0047Ω; ID 16A; SO-8; PD 2.5W; VGS +/-12V; -55
International Rectifier
Trans MOSFET N-CH 20V 16A 8Pin SOIC Tube
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20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
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