| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 520 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0145 Ω |
| Polarity | N-CH |
| Power Dissipation | 520 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 10880 pF |
| Drain to Source Voltage (Vds) | 250 V |
| Continuous Drain Current (Ids) | 93A |
| Rise Time | 160 ns |
| Input Capacitance (Ciss) | 10880pF @50V(Vds) |
| Input Power (Max) | 520 W |
| Fall Time | 110 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 520W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP4768PBF is a 250V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
Infineon
8 Pages / 0.32 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.19 MByte
International Rectifier
MOSFET N-CH 250V 93A TO-247AC
Infineon
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International Rectifier
Trans MOSFET N-CH 250V 93A 3Pin(3+Tab) TO-247AC Tube
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