TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | PQFN-8 |
Number of Channels | 1 Channel |
Number of Positions | 5 Position |
Drain to Source Resistance (on) (Rds) | 0.0011 Ω |
Polarity | N-Channel |
Power Dissipation | 156 W |
Threshold Voltage | 3 V |
Input Capacitance | 6419 pF |
Drain to Source Voltage (Vds) | 40 V |
Breakdown Voltage (Drain to Source) | 40 V |
Continuous Drain Current (Ids) | 259A |
Rise Time | 51 ns |
Input Capacitance (Ciss) | 6419pF @25V(Vds) |
Input Power (Max) | 156 W |
Fall Time | 49 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 156W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 6 mm |
Size-Width | 5 mm |
Size-Height | 0.85 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFH7004TRPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
11 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
2 Pages / 0.06 MByte
Infineon
40V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
International Rectifier
MOSFET 40V 100A 1.4mOhm HEXFET 156W 134NC
International Rectifier
Trans MOSFET N-CH 40V 259A 8Pin PQFN EP T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.