TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 300 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0041 Ω |
Polarity | N-CH |
Power Dissipation | 300 W |
Threshold Voltage | 4 V |
Input Capacitance | 6920 pF |
Drain to Source Voltage (Vds) | 75 V |
Continuous Drain Current (Ids) | 170A |
Rise Time | 68 ns |
Input Capacitance (Ciss) | 6920pF @50V(Vds) |
Input Power (Max) | 300 W |
Fall Time | 68 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.66 mm |
Size-Width | 4.82 mm |
Size-Height | 9.02 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB3207ZPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for AC-to-DC, battery-operated drive, high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
12 Pages / 0.47 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 75V 180A 3Pin (3+Tab) TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 3.6Milliohms; ID 180A; TO-220AB; PD 330W; -55de
International Rectifier
Trans MOSFET N-CH 75V 170A 3Pin(3+Tab) TO-220AB
International Rectifier
Single N-Channel 75V 300W 260NC Through Hole Hexfet Power MOSFET - TO-220AB
International Rectifier
MOSFET N-CH 75V 120A TO-220AB
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.