| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 1 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.031 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.1 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 6.5A |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 840pF @25V(Vds) |
| Fall Time | 28 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRLL3303PBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques.
● Dynamic dV/dt rating
● Logic level gate drive
● Ease of paralleling
● Advanced process technology
● Ultra-low ON-resistance
● Low static drain-to-source ON-resistance
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