TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 7 Pin |
Case/Package | Direct-FET |
Polarity | N-CH |
Power Dissipation | 2.8 W |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 10.3A |
Rise Time | 26 ns |
Input Capacitance (Ciss) | 2210pF @25V(Vds) |
Fall Time | 16 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 6.35 mm |
Size-Width | 5.05 mm |
Size-Height | 0.7 mm |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
N-Channel 100V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
Infineon
10 Pages / 0.25 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
11 Pages / 0.24 MByte
Infineon
Direct-FET N-CH 100V 10.3A
International Rectifier
Trans MOSFET N-CH 100V 10.3A 7Pin Direct-FET MN
Infineon
Direct-FET N-CH 100V 10.3A
International Rectifier
Trans MOSFET N-CH 100V 10.3A 7Pin Direct-FET MN T/R
International Rectifier
Trans MOSFET N-CH 100V 10.3A 7Pin Direct-FET MN T/R
Infineon
Direct-FET N-CH 100V 10.3A
Infineon
Direct-FET N-CH 100V 10.3A
International Rectifier
Trans MOSFET N-CH 100V 10.3A 7Pin Direct-FET MN T/R
Infineon
Direct-FET N-CH 100V 10.3A
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