TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Polarity | N-CH |
Power Dissipation | 2.5W (Ta) |
Drain to Source Voltage (Vds) | 150 V |
Continuous Drain Current (Ids) | 3.6A |
Rise Time | 4.2 ns |
Input Capacitance (Ciss) | 990pF @25V(Vds) |
Fall Time | 15 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fully Characterized Avalanche Voltage and Current
● Low Gate-to-Drain Charge to Reduce Switching Losses
● Fully Characterized Capacitance Including Effective Coss to Simplify Design
Infineon
28 Pages / 1.49 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
MOSFET N-CH 150V 3.6A 8-SOIC
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.09Ω, Id=3.6A)
International Rectifier
Trans MOSFET N-CH 150V 3.6A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 150V 3.6A 8Pin SOIC
International Rectifier
MOSFET N-CH 150V 3.6A 8-SOIC
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