| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Micro-8 |
| Power Rating | 1.25 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.11 Ω |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 1.25 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 2.7A/2A |
| Input Capacitance (Ciss) | 210pF @25V(Vds) |
| Input Power (Max) | 1.25 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.25 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 3 mm |
| Size-Height | 0.86 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7509TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
● Generation V technology
● Ultra low ON-resistance
● Low profile
● Fast switching performance
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