| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.049 Ω |
| Polarity | Dual P-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 5.3A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 780pF @15V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 49 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7314TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
● Generation V technology
● Ultra low ON-resistance
● Surface-mount device
● Fully avalanche rated
Infineon
7 Pages / 0.19 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
8 Pages / 0.11 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
MOSFET 2P-CH 20V 5.3A 8-SOIC
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -20V; RDS(ON) 0.058Ω; ID -5.3A; SO-8; PD 2W; VGS +/-12
International Rectifier
Trans MOSFET P-CH 20V 5.3A 8Pin SOIC Tube
International Rectifier
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
Trans MOSFET P-CH 20V 5.2A 8Pin SOIC
International Rectifier
MOSFET 2P-CH 20V 5.2A 8SOIC
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
