TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 5 Pin |
Case/Package | TO-220-5 |
Power Rating | 18 W |
Number of Positions | 5 Position |
Drain to Source Resistance (on) (Rds) | 0.058 Ω |
Polarity | N-Channel |
Power Dissipation | 18 W |
Threshold Voltage | 5 V |
Input Capacitance | 490 pF |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 11A |
Rise Time | 8.3 ns |
Input Capacitance (Ciss) | 490pF @50V(Vds) |
Input Power (Max) | 18 W |
Fall Time | 4.3 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 18000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 4.83 mm |
Size-Height | 9.02 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFI4212H-117P is a HEXFET® dual N-channel Power MOSFET designed for class-D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device. It can delivery up to 150W per channel into 4R load in half-bridge configuration amplifier.
● Reduces the part count by half
● Facilitates better PCB layout
● Low RDS (ON) for improved efficiency
● Low Qg and Qsw for better THD and improved efficiency
● Low Qrr for better THD and lower EMI
Infineon
7 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
International Rectifier
Trans MOSFET N-CH 100V 11A 5Pin(5+Tab) TO-220FP Tube
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