| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.017 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 900 mV |
| Drain to Source Voltage (Vds) | 12 V |
| Breakdown Voltage (Drain to Source) | 12 V |
| Continuous Drain Current (Ids) | 9.2A |
| Rise Time | 8.6 ns |
| Input Capacitance (Ciss) | 3450pF @10V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 260 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7329PBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
● Trench technology
● Ultra low ON-resistance
● Low profile
Infineon
9 Pages / 0.16 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
15 Pages / 0.24 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
-12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
International Rectifier
MOSFET 2P-CH 12V 9.2A 8-SOIC
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