| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 5 Pin |
| Case/Package | TO-220-5 |
| Power Rating | 21 W |
| Number of Positions | 5 Position |
| Drain to Source Resistance (on) (Rds) | 0.08 Ω |
| Polarity | N-Channel |
| Power Dissipation | 21 W |
| Threshold Voltage | 4.9 V |
| Input Capacitance | 1240 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 9.1A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 1240pF @25V(Vds) |
| Input Power (Max) | 21 W |
| Fall Time | 4 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 21000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFI4020H-117P is a HEXFET® dual N-channel Power MOSFET designed for class-D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device. It can delivery up to 300W per channel into 8R load in half-bridge configuration amplifier.
● Reduces the part count by half
● Facilitates better PCB layout
● Low RDS (ON) for improved efficiency
● Low Qg and Qsw for better THD and improved efficiency
● Low Qrr for better THD and lower EMI
Infineon
7 Pages / 0.19 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
Trans MOSFET N-CH 200V 9.1A 5Pin(5+Tab) TO-220FP Tube
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