| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0125 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.8 V |
| Input Capacitance | 760 pF |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 9.7A |
| Rise Time | 9.9 ns |
| Input Capacitance (Ciss) | 760pF @15V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 4.2 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF8313TRPBF is a dual N-channel Power MOSFET incorporates the latest HEXFET power silicon technology into the industry standard package. It has been optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-to-DC converters that power the latest generation of processors for notebook and Netcom applications.
● Low gate charge and low RDS (ON)
● Fully characterized avalanche voltage and current
● Halogen-free
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