| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.018 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 4.9 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 8.3A |
| Rise Time | 6.6 ns |
| Maximum Forward Voltage (Max) | 1.3 V |
| Input Capacitance (Ciss) | 1640pF @25V(Vds) |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7853PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for primary side switch in bridge topology in universal input (36 to 75Vin) isolated DC-to-DC converters, primary side switch in push-pull topology for 18 to 36Vin isolated DC-to-DC converter, secondary side synchronous rectification switch for 15Vout and 48V non-isolated synchronous buck DC-to-DC applications.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
8 Pages / 0.2 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
International Rectifier
Trans MOSFET N-CH 100V 8.3A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 14.4 Milliohms; ID 8.3A; SO-8; PD 2.5W; gFS 11S
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