| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 80.0 A |
| Case/Package | TO-263-3 |
| Drain to Source Resistance (on) (Rds) | 15 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 260 W |
| Part Family | IRF8010S |
| Threshold Voltage | 4 V |
| Input Capacitance | 3830pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 130 ns |
| Input Capacitance (Ciss) | 3830pF @25V(Vds) |
| Input Power (Max) | 260 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.67 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●N-Channel Power MOSFET 80A to 99A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
11 Pages / 0.24 MByte
International Rectifier
10 Pages / 0.21 MByte
International Rectifier
Trans MOSFET N-CH 100V 80A 3Pin (3+Tab) TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 12Milliohms; ID 80A; TO-220AB; PD 260W; -55deg
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 12Milliohms; ID 80A; D2Pak; PD 260W; VGS +/-20
International Rectifier
Single N-Channel 100V 15mOhm 120NC 260W Silicon SMT Mosfet - TO-263-3
International Rectifier
Trans MOSFET N-CH 100V 80A 3Pin (2+Tab) D2PAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
