| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0056 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.2 V |
| Input Capacitance | 2910pF @15V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 17.2A |
| Rise Time | 8.9 ns |
| Input Capacitance (Ciss) | 2910pF @15V(Vds) |
| Fall Time | 3.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Rail, Tube |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF8113PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for notebook processor power and isolated DC-to-DC converters.
● Low gate charge
● 100% Rg tested
● Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
● Ultra-low gate impedance
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International Rectifier
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MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.7Milliohms; ID 17.2A; SO-8; PD 2.5W; VGS +/-2
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.7Milliohms; ID 17.2A; SO-8; PD 2.5W; VGS +/-2
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Trans MOSFET N-CH 30V 17.2A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 17.2A 8Pin SOIC
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