| TYPE | DESCRIPTION |
|---|
| Number of Pins | 2 Pin |
| Case/Package | TO-204 |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 0.3 Ω |
| Power Dissipation | 75 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Input Capacitance (Ciss) | 860pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 75000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF9130 is a P-channel HEXFET® Power MOSFET with low on-state resistance combined with high transconductance, superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
● Hermetically sealed
● Dynamic dv/dt rating
● Fully avalanche rated
● Hermetically sealed
● Ease of paralleling
Infineon
7 Pages / 0.8 MByte
Infineon
7 Pages / 0.12 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
