| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 4 MHz |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | -250 V |
| Current Rating | -16.0 A |
| Case/Package | TO-204-2 |
| Polarity | PNP, P-Channel |
| Power Dissipation | 250 W |
| Breakdown Voltage (Collector to Emitter) | 250 V |
| Continuous Collector Current | 16A |
| hFE Min | 25 @8A, 5V |
| hFE Max | 75 |
| Input Power (Max) | 250 W |
| DC Current Gain (hFE) | 25 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 250000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Material | Silicon |
| Size-Width | 26.67 mm |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
●MJ21195 − PNP
●MJ21196 − NPN
●The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
●Features
●•Total Harmonic Distortion Characterized
●•High DC Current Gain − hFE= 25 Min @ IC= 8 Adc
●•Excellent Gain Linearity
●•High SOA: 3 A, 80 V, 1 Sec
●•Pb−Free Packages are Available
ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
7 Pages / 0.17 MByte
ON Semiconductor
1 Pages / 0.03 MByte
ON Semiconductor
6 Pages / 0.12 MByte
ON Semiconductor
1 Pages / 0.13 MByte
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