| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 16 Pin |
| Supply Voltage (DC) | 2.25V (min) |
| Case/Package | SOIC-16 |
| Rise/Fall Time | 1.7ns, 1.9ns |
| Number of Channels | 4 Channel |
| Number of Positions | 16 Position |
| Power Dissipation | 200 mW |
| Rise Time | 1.7 ns |
| Isolation Voltage | 5700 Vrms |
| Input Current (Min) | 10 μA |
| Fall Time (Max) | 3.9 ns |
| Fall Time (Max) | 3.9 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200 mW |
| Supply Voltage | 2.25V ~ 5.5V |
| Supply Voltage (Max) | 5.5 V |
| Supply Voltage (Min) | 2.25 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 10.3 mm |
| Size-Width | 7.5 mm |
| Operating Temperature | -55℃ ~ 125℃ |
The ISO7842DW is a quad-channel Digital Isolator with a 8000VPK isolation voltage. It has reinforced isolation certifications according to VDE, CSA, CQC and TUV. The isolator provides high electromagnetic immunity and low emissions at low-power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by a silicon-dioxide (SiO2) insulation barrier. This device comes with enable pins that can be used to put the respective outputs in high impedance for multi-master driving applications and to reduce power consumption. The ISO7842 device has two forward and two reverse-direction channels. It is used in conjunction with isolated power supplies, this device helps prevent noise currents on a data bus or other circuits from entering the local ground and interfering with or damaging sensitive circuitry.
● Up to 100Mbps signalling rate
● ±100kV/µs Minimum industry leading CMTI
● Robust electromagnetic compatibility (EMC)
● Low emissions
● >40 Years isolation barrier life
● Low-power consumption
● Green product and no Sb/Br
●Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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