| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 320 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.054 Ω |
| Polarity | N-CH |
| Power Dissipation | 320 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 2900 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 38A |
| Rise Time | 95 ns |
| Input Capacitance (Ciss) | 2900pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Fall Time | 47 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB38N20DPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for high frequency DC-to-DC converters and plasma display panel.
● Fully characterized avalanche voltage and current
● Low gate-to-drain charge to reduce switching losses
Infineon
11 Pages / 0.32 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
12 Pages / 0.56 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
2 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.054Ω; ID 43A; TO-220AB; PD 300W; VGS +/-30V
International Rectifier
MOSFET N-CH 200V 43A TO-220AB
IFA
N-Channel 200V 54mΩ 60NC Flange Mount Hexfet Power Mosfet - TO-220AB
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.054Ω, Id=44A)
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
