| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 370 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0034 Ω |
| Polarity | N-Channel |
| Power Dissipation | 370 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 180A |
| Rise Time | 330 ns |
| Input Capacitance (Ciss) | 11360pF @50V(Vds) |
| Fall Time | 170 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 370000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLS4030PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is optimized for logic level drive. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Very low RDS (ON) at 4.5V VGS
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
● Logic level
Infineon
10 Pages / 0.37 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
9 Pages / 0.14 MByte
Infineon
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International Rectifier
MOSFET 100V 1 N-CH HEXFET 3.9mOhms 93NC
International Rectifier
Trans MOSFET N-CH 100V 180A 3Pin(2+Tab) D2PAK Tube
International Rectifier
MOSFET, 100V, 180A, 4.3mOhm, 87NC Qg, D2-PAK
International Rectifier
Trans MOSFET N-CH 100V 190A 7Pin(6+Tab) D2PAK T/R
Infineon
100V Single N-Channel HEXFET Power MOSFET in a 7Pin D2-Pak package
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
