TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Power Rating | 140 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0039 Ω |
Polarity | N-Channel |
Power Dissipation | 140 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 40 V |
Continuous Drain Current (Ids) | 130A |
Rise Time | 140 ns |
Input Capacitance (Ciss) | 3810pF @25V(Vds) |
Fall Time | 50 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 140W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLR3114ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
● Logic level
Infineon
11 Pages / 0.3 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
Trans MOSFET N-CH 40V 130A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 40V 130A 3Pin(2+Tab) DPAK Tube
Infineon
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International Rectifier
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.