TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 130 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0026 Ω |
Polarity | N-Channel |
Power Dissipation | 300 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55 V |
Continuous Drain Current (Ids) | 210A |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 7960pF @25V(Vds) |
Fall Time | 78 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 4.83 mm |
Size-Height | 16.51 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fast Switching
● 175°C Operating Temperature
●Target Applications:
● AC-DC
Infineon
12 Pages / 0.37 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
International Rectifier
MOSFET N-CH 55V 75A TO-220AB
International Rectifier
Trans MOSFET N-CH 55V 210A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 2.6Milliohms; ID 75A; D2Pak; PD 330W; VGS +/-20
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