| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 100 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Threshold Voltage | 4.9 V |
| Input Capacitance | 1200 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 18A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 1200pF @50V(Vds) |
| Input Power (Max) | 100 W |
| Fall Time | 6.3 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 100W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8R load in half-bridge configuration amplifier. It is suitable for battery operated drive, full-bridge and push-pull application.
● Low RDS (ON) for improved efficiency
● Low Qg and Qsw for better THD and improved efficiency
● Low QRR for better THD and lower EMI
Infineon
8 Pages / 0.62 MByte
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270 Pages / 11.59 MByte
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International Rectifier
MOSFET N-CH 200V 18A TO-220AB
International Rectifier
MOSFET, N Ch., Digital Audio, 200V, 18A, 100MOHM, 18NC QG, TO-220AB, Pb-Free
IFC
N-Channel 200V 100mΩ 18NC Flange Mount Digital Audio Mosfet - TO-220AB
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