TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Power Rating | 110 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.06 Ω |
Polarity | P-CH |
Power Dissipation | 110 W |
Threshold Voltage | 4 V |
Input Capacitance | 1200 pF |
Drain to Source Voltage (Vds) | 55 V |
Continuous Drain Current (Ids) | 31A |
Rise Time | 66 ns |
Input Capacitance (Ciss) | 1200pF @25V(Vds) |
Input Power (Max) | 3.8 W |
Fall Time | 63 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 10.67 mm |
Size-Width | 9.65 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● P-Channel MOSFET
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International Rectifier
P-Channel MOSFET, Vdss = -55V, Rds = 0.06Ω, Id = -31A, TO-220
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.06Ω, Id=-31A)
New Jersey Semiconductor
Trans MOSFET P-CH 55V 31A 3Pin(3+Tab) TO-220ABO
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ω; ID -31A; TO-220AB; PD 110W; VGS +/-20V
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