TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0091 Ω |
Polarity | N-CH |
Power Dissipation | 2.5 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 13.6A |
Rise Time | 2.7 ns |
Input Capacitance (Ciss) | 1010pF @15V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 7.3 ns |
Operating Temperature (Max) | 155 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 155℃ (TJ) |
The IRF7821PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency point-of-load synchronous buck converter for applications in networking system.
● Low gate charge
● Ultra-low gate impedance
● Low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
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