TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Power Rating | 3.8 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.042 Ω |
Polarity | N-Channel |
Power Dissipation | 200 W |
Threshold Voltage | 4 V |
Input Capacitance | 2400pF @25V |
Drain to Source Voltage (Vds) | 150 V |
Breakdown Voltage (Drain to Source) | 150 V |
Continuous Drain Current (Ids) | 43A |
Rise Time | 55 ns |
Thermal Resistance | 0.75℃/W (RθJC) |
Input Capacitance (Ciss) | 2400pF @25V(Vds) |
Fall Time | 69 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 6.22 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF3415SPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
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International Rectifier
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
New Jersey Semiconductor
Trans MOSFET N-CH 150V 43A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=150V, Rds(on)=0.042Ω, Id=43A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.042Ω; ID 43A; TO-220AB; PD 200W; VGS +/-20V
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.042Ω; ID 43A; D2Pak; PD 200W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 150V 43A 3Pin(2+Tab) D2PAK T/R
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