TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Power Rating | 43 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.6 Ω |
Polarity | N-CH |
Power Dissipation | 43 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Continuous Drain Current (Ids) | 5A |
Rise Time | 11 ns |
Input Capacitance (Ciss) | 300pF @25V(Vds) |
Input Power (Max) | 43 W |
Fall Time | 12 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 43W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 6.22 mm |
Size-Height | 2.3 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR220NTRPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
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