| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Power Rating | 66 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.205 Ω |
| Polarity | P-Channel |
| Power Dissipation | 66 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 13A |
| Rise Time | 58 ns |
| Input Capacitance (Ciss) | 760pF @25V(Vds) |
| Input Power (Max) | 66 W |
| Fall Time | 46 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 66W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 2.39 mm |
| Size-Height | 6.22 mm |
| Lead Length | 9.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● P-Channel MOSFET
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11 Pages / 0.26 MByte
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International Rectifier
MOSFET P-CH 100V 13A I-PAK
IRF
Power MOSFET(Vdss=-100V, Rds(on)=0.205Ω, Id=-13A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; I-Pak (TO-251AA); PD 66W
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