TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 330 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.012 Ω |
Polarity | N-CH |
Power Dissipation | 330 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 150 V |
Breakdown Voltage (Drain to Source) | 150 V |
Continuous Drain Current (Ids) | 83A |
Input Capacitance (Ciss) | 4530pF @25V(Vds) |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 330W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10 mm |
Size-Width | 4.4 mm |
Size-Height | 8.77 mm |
Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IRFB4228PBF is a HEXFET® single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. It is optimized for PDP sustain, energy recovery and pass switch applications.
● Advanced process technology
● Low EPULSE rating to reduce power dissipation
● Low Qg for fast response
● High repetitive peak current capability for reliable operation
● Short fall and rise times for fast switching
● Repetitive avalanche capability for robustness and reliability
Infineon
8 Pages / 0.28 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.04 MByte
International Rectifier
Trans MOSFET N-CH 150V 83A 3Pin(3+Tab) TO-220AB Tube
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