| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 580 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.023 Ω |
| Polarity | N-Channel |
| Power Dissipation | 580 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 6040 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 94A |
| Rise Time | 160 ns |
| Input Capacitance (Ciss) | 6040pF @25V(Vds) |
| Input Power (Max) | 580 W |
| Fall Time | 79 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 580W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.3 mm |
| Size-Height | 20.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP90N20DPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Low gate to drain charge to reduce switching loss
● Fully characterized capacitance and avalanche SOA
Infineon
9 Pages / 0.16 MByte
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International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.023Ω; ID 94A; TO-247AC; PD 580W; VGS +/-30V
International Rectifier
200V Single N-channel Hexfet Power Mosfet In A To-247ac Package
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.023Ω, Id=94A)
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