| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | QFN-8 |
| Power Rating | 2.7 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.003 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.7 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 21A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 2155pF @25V(Vds) |
| Input Power (Max) | 2.7 W |
| Fall Time | 9.2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2700 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.3 mm |
| Size-Width | 3.3 mm |
| Size-Height | 1.05 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFHM830TRPBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for battery protection, point of load ControlFET, high side and low side load switch. It is compatible with existing surface-mount techniques.
● Low RDS (ON) (<3.8mR) results in low conduction losses
● Low thermal resistance to PCB (<3.4°C/W) enables better thermal dissipation
● 100% Rg tested for increased reliability
● Halogen-free
● Industrial qualification MSL-1 (increased reliability)
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