| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 59.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 200 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.025 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Part Family | IRFB59N10D |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 2450 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 59.0 A |
| Rise Time | 90 ns |
| Input Capacitance (Ciss) | 2450pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 8.77 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB59N10DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
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