| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 517 W |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 1.8 mΩ |
| Polarity | N-CH |
| Power Dissipation | 517 W |
| Threshold Voltage | 3.7 V |
| Drain to Source Voltage (Vds) | 75 V |
| Breakdown Voltage (Drain to Source) | 75 V |
| Continuous Drain Current (Ids) | 355A |
| Rise Time | 164 ns |
| Input Capacitance (Ciss) | 29550pF @25V(Vds) |
| Fall Time | 160 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 517W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
● Lead-free, RoHS compliant
● StrongIRFET™
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75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
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