| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 140 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.018 Ω |
| Polarity | N-CH |
| Power Dissipation | 140 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2930pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 56A |
| Rise Time | 43 ns |
| Input Capacitance (Ciss) | 2930pF @25V(Vds) |
| Fall Time | 42 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 140W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR3710ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
● Advanced process technology
● Ultra low on-resistance
● Repetitive avalanche allowed up to Tjmax
● 175°C Operating temperature
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International Rectifier
Trans MOSFET N-CH 100V 56A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 15Milliohms; ID 56A; D-Pak (TO-252AA); -55deg
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 15Milliohms; ID 56A; D-Pak (TO-252AA); -55deg
International Rectifier
Trans MOSFET N-CH 100V 56A 3Pin(2+Tab) DPAK
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 15Milliohms; ID 56A; D-Pak (TO-252AA); -55deg
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