| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-23-6 |
| Power Rating | 1.7 W |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.7 W |
| Input Capacitance | 210 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 2.4A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 210pF @15V(Vds) |
| Input Power (Max) | 1.7 W |
| Fall Time | 18 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.7W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3 mm |
| Size-Width | 1.75 mm |
| Size-Height | 1.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRLMS6702TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It"s unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%.
● Generation V technology
● Ultra-low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
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