TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Polarity | N-CH |
Power Dissipation | 29 W |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 14A |
Rise Time | 34 ns |
Input Capacitance (Ciss) | 370pF @25V(Vds) |
Fall Time | 27 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 29W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Size-Length | 10 mm |
Size-Width | 4.4 mm |
Size-Height | 15.65 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 60V 14A (Tc) 29W (Tc) Through Hole TO-220AB Full-Pak
Infineon
9 Pages / 0.21 MByte
Vishay Siliconix
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Samsung
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
Infineon
Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3
Fairchild
Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3
VISHAY
TO-220-3 N-CH 60V 14A 100mΩ
International Rectifier
Trans MOSFET N-CH 55V 14A 3Pin(3+Tab) TO-220FP Tube
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(3+Tab) TO-220FP
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.