NTMS10P02R2G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	SOIC-8
Description:	Power MOSFET -20V -10A 14mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL
Documentation:	NTMS10P02R2G Datasheet (6 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on6 Page Package Footprint Pad Layout on6 Page Part Numbering System on1 Page 6 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTMS10P02R2G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	8 Pin
Voltage Rating (DC)	-20.0 V
Current Rating	-10.0 A
Case/Package	SOIC-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.014 Ω
Polarity	P-Channel
Power Dissipation	2.5 W
Threshold Voltage	880 mV
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Gate to Source)	±12.0 V
Continuous Drain Current (Ids)	10.0 A, 10.0 mA
Input Capacitance (Ciss)	3640pF @16V(Vds)
Input Power (Max)	1.6 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.6W (Ta)