| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 37 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 14.0 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 37000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Height | 9.8 mm |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsinkusing a single clip or by a single screw fixing.
●FEATURES
●• Isolated Package
●• High Voltage Isolation = 2.5 kVRMS(t = 60 s; f = 60 Hz)
●• Sink to Lead Creepage Distance = 4.8 mm
●• 175 °C Operating Temperature
●• Dynamic dV/dt Rating
●• Low Thermal Resistance
●• Lead (Pb)-free Available
Vishay Semiconductor
8 Pages / 1.51 MByte
Vishay Semiconductor
20 Pages / 2.6 MByte
Vishay Siliconix
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
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VISHAY
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