| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 306 W |
| Number of Positions | 3 Position |
| Power Dissipation | 306 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 50 ns |
| Input Power (Max) | 306 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 306 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IRGP6650DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for welding and H bridge converters. It features improved reliability due to rugged hard switching performance and high power capability.
● Low VCE(ON) and switching losses
● Optimized diode for full bridge hard switch converters
● Square RBSOA
● High efficiency in a wide range of applications
● Enables short-circuit protection operation
● Excellent current sharing in parallel operation
● Environmentally-friendly
● 5µs Short-circuit
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