TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | TO-261-4 |
Power Rating | 2.8 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0462 Ω |
Polarity | N-Channel |
Power Dissipation | 2.8 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 55 V |
Continuous Drain Current (Ids) | 5.1A |
Rise Time | 21 ns |
Input Capacitance (Ciss) | 340pF @25V(Vds) |
Input Power (Max) | 1 W |
Fall Time | 23 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 6.7 mm |
Size-Width | 3.7 mm |
Size-Height | 1.8 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fast Switching
● 175°C Operating Temperature
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IRF
Power MOSFET(Vdss=55V, Rds(on)=0.075Ω, Id=2.8A)
International Rectifier
Trans MOSFET N-CH 55V 5.1A 4Pin(3+Tab) SOT-223 T/R
International Rectifier
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International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.075Ω; ID 2.8A; SOT-223; PD 1W; VGS +/-20V
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 46.2 Milliohms; ID 5.1A; SOT-223; PD 1W; VF 1.3V
International Rectifier
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