| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Power Rating | 57 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.11 Ω |
| Polarity | P-Channel |
| Power Dissipation | 57 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 18A |
| Rise Time | 28 ns |
| Input Capacitance (Ciss) | 650pF @25V(Vds) |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 57W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFU5505PBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The straight lead version is for through-hole mounting applications.
● Advanced process technology
● Fast switching
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Halogen-free
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International Rectifier
MOSFET P-CH 55V 18A I-PAK
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.11Ω, Id=-18A)
International Rectifier
Trans MOSFET P-CH 55V 18A 3Pin(3+Tab) IPAK Tube
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